Description 

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. 

Features 

⚫ High Speed Switching with Low Capacitances 

⚫ High Blocking Voltage with Low RDS(on) 

⚫ Optimized package with separate driver source pin 

⚫ Easy to parallel and simple to drive 

⚫ ROHS Compliant, Halogen free 

Application 

⚫ EV Charging 

⚫ High Voltage DC/DC Converters 

⚫ Switch Mode Power Supplies 

⚫ Power Factor Correction Modules